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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Quantitative strain characterization of sige heterostructures by high-resolution transmission electron microscopy 期刊论文 Physica b-condensed matter, 2010, 卷号: 405, 期号: 16, 页码: 3433-3435 作者:  Zhao, C. W.;  Xing, Y. M.;  Yu, J. Z.;  Han, G. Q. 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Si/ge heterostructures  Strain  High-resolution transmission electron  Microscopy   Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy 期刊论文 physica b-condensed matter, 2010, 卷号: 405, 期号: 16, 页码: 3433-3435 Zhao CW (Zhao C. W.); Xing YM (Xing Y. M.); Yu JZ (Yu J. Z.); Han GQ (Han G. Q.) 收藏  |  浏览/下载：100/3  |  提交时间：2010/09/07 Si/Ge heterostructures  Strain  High-resolution Transmission electron  microscopy   Strain-induced anodization of sige/si multiple layers to form high density sige/si heterogeneous nanorods 期刊论文 Solid state communications, 2009, 卷号: 149, 期号: 43-44, 页码: 1897-1901 作者:  Zhou, Bi;  Pan, S. W.;  Chen, Rui;  Chen, S. Y.;  Li, Cheng 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Strain-induced  Electrochemical anodization  Silicon germanium  Heterogeneous nanostructures   A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 3063-3066 Fan, HB; Yang, SY; Zhang, PF; Wei, HY; Liu, XL; Jiao, CM; Zhu, QS; Chen, YH; Wang, ZG 收藏  |  浏览/下载：80/3  |  提交时间：2010/03/08 SINGLE-CRYSTAL  PHASE EPITAXY  SAPPHIRE  NANORODS  FILMS   Synthesis and characterization of ZnO nanoflowers grown on AIN films by solution deposition 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 640-643 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP 收藏  |  浏览/下载：51/4  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  NANORODS  MECHANISM  NANOWIRES   Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文 microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585 Ran JX; Wang XL; Hu GX; Wang JX; Li JP; Wang CM; Zeng YP; Li JM 收藏  |  浏览/下载：53/0  |  提交时间：2010/04/11 GaN  Mg memory effect  redistribution  AlGaN/GaN HBTs  MOCVD  CHEMICAL-VAPOR-DEPOSITION  HETEROJUNCTION BIPOLAR-TRANSISTORS  FABRICATION   Type-ii sige/si mqws (multi-quantum wells) and self-organized ge/si islands grown by uhv/cvd system 期刊论文 International journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4228-4233 作者:  Yu, JZ;  Huang, CJ;  Cheng, BW;  Zuo, YH;  Luo, LP 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system 期刊论文 international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4228-4233 Yu JZ; Huang CJ; Cheng BW; Zuo YH; Luo LP; Wang QM 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system 会议论文 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Yu JZ; Huang CJ; Cheng BW; Zuo YH; Luo LP; Wang QM 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/15