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半导体研究所 [26]

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	Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文 journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者: Wang C 收藏 \| 浏览/下载：69/3 \| 提交时间：2011/07/05 Hydrogenated nanocrystalline silicon Buffer layer i/p interface Solar cells OPEN-CIRCUIT VOLTAGE A-SI-H P/I-INTERFACE MICROCRYSTALLINE SILICON VAPOR-DEPOSITION FILMS CAPACITANCE EFFICIENCY CRYSTALLINE TEMPERATURE
	Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate 期刊论文 materials letters, 2011, 卷号: 65, 期号: 5, 页码: 860-862 Zheng J; Tao YL; Wang W; Zhang LZ; Zuo YH; Xue CL; Cheng BW; Wang QM 收藏 \| 浏览/下载：66/3 \| 提交时间：2011/07/05 Luminescence Optical materials and properties Sputtering Thin films PHOTOLUMINESCENCE ER3+
	Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文 materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265 作者: Xue CL 收藏 \| 浏览/下载：63/4 \| 提交时间：2011/07/05 Multilayers Inorganic compounds Sputtering Optical properties DOPED SI/SIO2 SUPERLATTICES ERBIUM SILICATE ER3+ LUMINESCENCE FILMS PHOTOLUMINESCENCE
	Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716 作者: Yin ZG; Zhang XW; Tan HR; Fan YM; Zhang SG 收藏 \| 浏览/下载：42/3 \| 提交时间：2011/07/05 HIGH-PRESSURE SYNTHESIS VAPOR-DEPOSITION NUCLEATION EMISSION DIAMOND GROWTH
	Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏 \| 浏览/下载：128/4 \| 提交时间：2010/04/13 GaN Si (111) substrate metalorganic chemical vapour deposition AlN buffer layer AlGaN interlayer : VAPOR-PHASE EPITAXY CRACK-FREE GAN STRESS-CONTROL SI(111) DEPOSITION ALXGA1-XN FILM
	Multimode resonances in metallically confined square-resonator microlasers 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 5, 页码: art. no. 051104 Che KJ (Che Kai-Jun); Yang YD (Yang Yue-De); Huang YZ (Huang Yong-Zhen) 收藏 \| 浏览/下载：185/14 \| 提交时间：2010/04/13 aluminium compounds finite difference time-domain analysis gallium compounds III-V semiconductors indium compounds laser cavity resonators photolithography refractive index sputter etching DIRECTIONAL EMISSION MICRODISK LASERS MODES
	Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏 \| 浏览/下载：27/0 \| 提交时间：2010/12/28 Cubic boron nitride Doping Ion beam assisted deposition X-ray photoelectron spectroscopy RAY PHOTOELECTRON-SPECTROSCOPY VAPOR-DEPOSITION SI NUCLEATION GROWTH
	Top-emission si-based phosphor organic light emitting diode with au doped ultrathin n-si film anode and bottom al mirror 期刊论文 Applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: 3 作者: Li, Y. Z.; Xu, W. J.; Ran, G. Z.; Qin, G. G. 收藏 \| 浏览/下载：26/0 \| 提交时间：2019/05/12 Aluminium Crystallisation Diffusion Elemental semiconductors Gold Organic light emitting diodes Phosphors Semiconductor thin films Silicon Sputter deposition
	Enhancement of field emission of the zno film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文 Applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: 3 作者: You, J. B.; Zhang, X. W.; Cai, P. F.; Dong, J. J.; Gao, Y. 收藏 \| 浏览/下载：21/0 \| 提交时间：2019/05/12 Atomic force microscopy Field emission Hydrogen Ii-vi semiconductors Plasma materials processing Sputter deposition Wide band gap semiconductors Work function Zinc compounds
	Enhancement of conductivity and transmittance of zno films by post hydrogen plasma treatment 期刊论文 Journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: 6 作者: Cai, P. F.; You, J. B.; Zhang, X. W.; Dong, J. J.; Yang, X. L. 收藏 \| 浏览/下载：20/0 \| 提交时间：2019/05/12 Annealing Carrier density Carrier mobility Diffusion Electrical conductivity Electrical resistivity Hydrogen Ii-vi semiconductors Impurity states Interstitials Light transmission Plasma materials processing Semiconductor thin films Sputter deposition Vacancies (crystal) Visible spectra Wide band gap semiconductors Zinc compounds

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