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科研机构
半导体研究所 [12]
内容类型
期刊论文 [12]
发表日期
2010 [1]
2008 [2]
2007 [2]
2006 [3]
1998 [3]
1995 [1]
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学科主题
光电子学 [3]
半导体材料 [3]
半导体物理 [2]
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Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Wang H (Wang Hui)
;
Zhang SM (Zhang Shu-Ming)
;
Qiu YX (Qiu Yong-Xin)
;
Xu K (Xu Ke)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2010/08/17
in-plane grazing incidence x-ray diffraction
gallium nitride
mosaic structure
biaxial strain
CHEMICAL-VAPOR-DEPOSITION
LATTICE-CONSTANTS
ALN
Investigation of native defects and property of bulk zno single crystal grown by a closed chemical vapor transport method
期刊论文
Journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
作者:
Wei, Xuecheng
;
Zhao, Youwen
;
Dong, Zhiyuan
;
Li, Jinmin
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Defects
X-ray diffraction
Growth from vapor
Oxides
Semiconducting ii-vi materials
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method
期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
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  |  
浏览/下载:52/0
  |  
提交时间:2010/03/08
defects
X-ray diffraction
growth from vapor
oxides
semiconducting II-VI materials
Investigation of gasb epilayer grown on vicinal gaas(001) substrate by high resolution x-ray diffraction
期刊论文
Physica scripta, 2007, 卷号: T129, 页码: 27-30
作者:
Qiu, Yongxin
;
Li, Meicheng
;
Wang, Yutian
;
Zhang, Baoshun
;
Wang, Yong
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2019/05/12
Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction
期刊论文
physica scripta, 2007, 卷号: t129, 页码: 27-30
Qiu, YX
;
Li, MC
;
Wang, YT
;
Zhang, BS
;
Wang, Y
;
Liu, GJ
;
Zhao, LC
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/03/08
FILMS
Evolution of mosaic structure in inn grown by metalorganic chemical vapor deposition
期刊论文
Journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272
作者:
Huang, Y.
;
Wang, H.
;
Sun, Q.
;
Chen, J.
;
Li, D. Y.
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/05/12
Growth mode
X-ray diffraction
Metalorganic chemical vapor deposition
Indium nitride
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition
期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114
Wang H (Wang H.)
;
Huang Y (Huang Y.)
;
Sun Q (Sun Q.)
;
Chen J (Chen J.)
;
Wang LL (Wang L. L.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Zhang SM (Zhang S. M.)
;
Jiang DS (Jiang D. S.)
;
Wang YT (Wang Y. T.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
X-RAY-DIFFRACTION
ELECTRON-TRANSPORT
EPITAXIAL GAN
BAND-GAP
DISLOCATIONS
SAPPHIRE
ALN
Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272
Huang Y (Huang Y.)
;
Wang H (Wang H.)
;
Sun Q (Sun Q.)
;
Chen J (Chen J.)
;
Li DY (Li D. Y.)
;
Zhang JC (Zhang J. C.)
;
Wang JF (Wang J. F.)
;
Wang YT (Wang Y. T.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
growth mode
X-ray diffraction
metalorganic chemical vapor deposition
indium nitride
X-RAY-DIFFRACTION
THREADING DISLOCATIONS
ELECTRON-TRANSPORT
BUFFER LAYER
THIN-FILMS
GAN FILMS
SAPPHIRE
ALN
Fabrication of gan epitaxial films on al2o3/si (001) substrates
期刊论文
Science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207
作者:
Wang, LS
;
Liu, XG
;
Zan, YD
;
Wang, D
;
Wang, J
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2019/05/12
Fabrication of gan epitaxial films
Al2o3/si(001) substrate
Metalorganic chemical deposition
Crystal structure and surface morphology
Photoluminescence spectrum
The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy
期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490
Wang LS
;
Liu XL
;
Zan YD
;
Wang D
;
Lu DC
;
Wang ZG
;
Wang YT
;
Cheng LS
;
Zhang Z
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
GaN
MOVPE growth
Al2O3 coated Si substrate
crystal structure
photoluminescence spectrum
SINGLE CRYSTALLINE GAN
HIGH-QUALITY GAN
INTERMEDIATE LAYER
BUFFER LAYERS
SI
FILMS
ALN
DEPOSITION
SAPPHIRE
MOLECULAR-BEAM EPITAXY
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