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Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9321-9325
作者:  Gaoqiang Deng;  Yuantao Zhang;  Ye Yu;  Long Yan;  Pengchong Li;  Xu Han;  Liang Chen;  Degang Zhao;  Guotong Du
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/19
Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 765, 页码: 245-248
作者:  H.R. Qi ;   L.K. Yi ;   J.L. Huang ;   S.T. Liu ;   F. Liang ;   M. Zhou ;   D.G. Zhao ;   D.S. Jiang
收藏  |  浏览/下载：18/0  |  提交时间：2019/11/19
Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文
ieee journal of photovoltaics, 2016, 卷号: 6, 期号: 2, 页码: 454-459
Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Jian-Jun Zhu; Zong-Shun Liu; Ling-Cong Le; Xiao-Guang He; Xiao-Jing Li; Li-Qun Zhang; Jian-Ping Liu; Hui Yang
收藏  |  浏览/下载：21/0  |  提交时间：2017/03/10
Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films 期刊论文
journal of vacuum science & technology a, 2015, 卷号: 33, 期号: 2, 页码: 021505
Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Lingcong Le; Xiaoguang He; Xiaojing Li
收藏  |  浏览/下载：22/0  |  提交时间：2016/03/23
Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage 期刊论文
journal of physics d-applied physics, 2014, 卷号: 47, 期号: 11, 页码: 115102
Tian, T; Wang, LC; Guo, EQ; Liu, ZQ; Zhan, T; Guo, JX; Yi, XY; Li, J; Wang, GH
收藏  |  浏览/下载：23/0  |  提交时间：2015/04/02
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 6, 页码: 068801
Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Li, L; Wu, LL; Le, LC; Li, XJ; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载：15/0  |  提交时间：2015/04/02
Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文
scientific reports, 2014, 卷号: 4, 页码: 6521
Wang, JM; Xu, FJ; Zhang, X; An, W; Li, XZ; Song, J; Ge, WK; Tian, GS; Lu, J; Wang, XQ; Tang, N; Yang, ZJ; Li, W; Wang, WY; Jin, P; Chen, YH; Shen, B
收藏  |  浏览/下载：21/0  |  提交时间：2015/03/20
Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN 期刊论文
semiconductor science and technology, 2013, 卷号: 28, 期号: 10, 页码: 105020
L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 85017
Wu, LL; Zhao, DG; Jiang, DS; Chen, P; Le, LC; Li, L; Liu, ZS; Zhang, SM; Zhu, JJ; Wang, H; Zhang, BS; Yang, H
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017
Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.)
收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02

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