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| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者: Jia CH ; Song HP![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:119/2  |  提交时间:2011/07/05
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| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145 作者: Duan RF![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:90/4  |  提交时间:2011/07/05
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| Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2012/02/06
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| Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:35/2  |  提交时间:2011/07/05
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| Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文 acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971 作者: Li JB![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:63/1  |  提交时间:2010/04/22
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| An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者: Wang YT ; Zhao DG ; Zhang SM ; Yang H; Jiang DS![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:147/11  |  提交时间:2010/04/04
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| Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903 Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:31/0  |  提交时间:2010/03/08
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| Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301 Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:193/43  |  提交时间:2010/03/08
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| Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 10, 页码: art.no.107803 Ma SS (Ma Shan-Shan); Wang, BR (Wang Bao-Rui); Sun BQ (Sun Bao-Quan); Wu DH (Wu Dong-Hai); Ni HQ (Ni Hai-Qiao); Niu ZC (Niu Zhi-Chuan)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:182/72  |  提交时间:2010/03/08
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| Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911 作者: Chen L![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:74/0  |  提交时间:2010/03/08
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