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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：128/4  |  提交时间：2010/04/13
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ
收藏  |  浏览/下载：115/3  |  提交时间：2010/04/05
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载：36/0  |  提交时间：2010/12/12
Thickness dependent dislocation, electrical and optical properties in inn films grown by mocvd 期刊论文
Acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Zhang Zeng;  Zhang Rong;  Xie Zi-Li;  Liu Bin;  Xiu Xiang-Qian
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载：71/1  |  提交时间：2010/03/08
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui)
收藏  |  浏览/下载：130/35  |  提交时间：2010/03/08
GaN  
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:  Yang JK;  Wei TB;  Duan RF
收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08
Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2009, 卷号: 487, 期号: 1-2, 页码: 400-403
作者:  Zhang SM;  Jiang DS;  Zhu JJ;  Guo X;  Wang YT
收藏  |  浏览/下载：167/33  |  提交时间：2010/03/08
Structural, electrical, and optical properties of inas(x)sb(1-x) epitaxial films grown by liquid-phase epitaxy 期刊论文
Journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: 5
作者:  Gao, Fubao;  Chen, Nuofu;  Zhang, X. W.;  Wang, Yu;  Liu, Lei
收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12

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