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Role of bi3+ ions for er3+ ions efficient 1.54 mu m light emission in er/bi codoped sio2 thin film prepared by sol-gel method 期刊论文
Journal of luminescence, 2010, 卷号: 130, 期号: 10, 页码: 1760-1763
作者:  Zheng, J.;  Zuo, Y. H.;  Zhang, L. Z.;  Wang, W.;  Xue, C. L.
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method 期刊论文
journal of luminescence, 2010, 卷号: 130, 期号: 10, 页码: 1760-1763
Zheng J (Zheng J.); Zuo YH (Zuo Y. H.); Zhang LZ (Zhang L. Z.); Wang W (Wang W.); Xue CL (Xue C. L.); Cheng BW (Cheng B. W.); Yu JZ (Yu J. Z.); Guo HQ (Guo H. Q.); Wang QM (Wang Q. M.)
收藏  |  浏览/下载:105/4  |  提交时间:2010/09/07
Strong visible and infrared photoluminescence from er-implanted silicon nitride films 期刊论文
Journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: 4
作者:  Ding, W. C.;  Hu, D.;  Zheng, J.;  Chen, P.;  Cheng, B. W.
收藏  |  浏览/下载:13/0  |  提交时间:2019/05/12
Strong visible and infrared photoluminescence from Er-implanted silicon nitride films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135101
作者:  Chen P
收藏  |  浏览/下载:47/3  |  提交时间:2010/03/08
Photoluminescence from Er-doped Si-in-SiNx thin films 期刊论文
optical materials, 2007, 卷号: 29, 期号: 8, 页码: 1071-1074
Bian LF; Zhang CG; Chen WD; Hsu CC; Ma LB; Song R; Cao ZX
收藏  |  浏览/下载:29/0  |  提交时间:2010/03/29
Deep level and photoluminescence studies of Er-implanted GaN films 期刊论文
journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 365-367
Song SF; Chen WD; Hsu CC; Xu XR
收藏  |  浏览/下载:31/0  |  提交时间:2010/03/29
GaN  
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m gainnas/gaas quantum wells grown by molecular-beam epitaxy 期刊论文
Chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者:  Wu, DH;  Niu, ZC;  Zhang, SY;  Ni, HQ;  He, ZH
收藏  |  浏览/下载:24/0  |  提交时间:2019/05/12
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302
作者:  Jiang DS
收藏  |  浏览/下载:36/0  |  提交时间:2010/04/11
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者:  Yang XH
收藏  |  浏览/下载:29/0  |  提交时间:2010/04/11
Local environment of Er3+ in Er-doped Si nanoclusters embedded in SiO2 films 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 23, 页码: art.no.231927
Bian LF; Zhang CG; Chen WD; Hsu CC; Shi TF
收藏  |  浏览/下载:50/0  |  提交时间:2010/03/29


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