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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载:20/0  |  提交时间:2011/09/14
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载:64/2  |  提交时间:2011/07/05
Defects in gallium nitride nanowires: First principles calculations 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044305
Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.)
收藏  |  浏览/下载:105/1  |  提交时间:2010/10/11
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载:123/5  |  提交时间:2010/04/22
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载:73/2  |  提交时间:2010/05/24
Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文
optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Zhou ZW (Zhou Zhiwen); He JK (He Jingkai); Wang RC (Wang Ruichun); Li C (Li Cheng); Yu JZ (Yu Jinzhong)
收藏  |  浏览/下载:85/0  |  提交时间:2010/08/17
The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 1, 页码: 91-93
Sun LL; Yan FW; Wang JX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载:219/46  |  提交时间:2010/03/08
The structural, morphological and magnetic characteristics of mn-implanted nonpolar a-plane gan films 期刊论文
Physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 1, 页码: 91-93
作者:  Sun, Lili;  Yan, Fawang;  Wang, Junxi;  Zeng, Yiping;  Wang, Guohong
收藏  |  浏览/下载:10/0  |  提交时间:2019/05/12
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载:41/0  |  提交时间:2010/03/09
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB
收藏  |  浏览/下载:24/0  |  提交时间:2010/03/08


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