CORC

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CORC

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Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 3, 页码: 1482-1484
Zhao, FC; Ding, Y; Xia, GQ; Tan, HZ
收藏  |  浏览/下载：13/0  |  提交时间：2012/03/24
Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 1, 页码: 604-607
Zhao, FC; Xia, GQ; Du, LX; Tan, HZ
收藏  |  浏览/下载：13/0  |  提交时间：2012/03/25
The effect of high Landau subbands filling on the hot-electron magneto-transport ultrafast transient in InSb 期刊论文
PHYSICA B, 1999, 卷号: 269, 期号: 1, 页码: 28-33
Caetano, EWS; Mendes, EA; Freire, VN; da Costa, JAP; LEI, XL（雷啸霖）（雷啸霖）
收藏  |  浏览/下载：14/0  |  提交时间：2012/03/25
PHOTOBEHAVIOR OF PARAMAGNETIC ANION ANTISITES IN PLASTICALLY DEFORMED GAAS 期刊论文
JOURNAL OF APPLIED PHYSICS, 1992, 卷号: 72, 期号: 4, 页码: 1323-1326
BENCHIGUER, T; MARI, B; SCHWAB, C; WU, J; WANG, GY
收藏  |  浏览/下载：103/0  |  提交时间：2012/03/25
EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS 期刊论文
PHYSICAL REVIEW B, 1990, 卷号: 42, 期号: 6, 页码: 3461-3468
CHRISTOFFEL, E; BENCHIGUER, T; GOLTZENE, A; SCHWAB, C; WANG, GY; WU, J
收藏  |  浏览/下载：11/0  |  提交时间：2012/03/25
ANNEALING BEHAVIOR OF STRAIN-INDUCED ANION ANTISITES IN SEMI-INSULATING GAAS 期刊论文
JOURNAL OF APPLIED PHYSICS, 1989, 卷号: 66, 期号: 6, 页码: 2651-2655
BENAKKI, S; CHRISTOFFEL, E; GOLTZENE, A; SCHWAB, C; WANG, GG; WU, J
收藏  |  浏览/下载：11/0  |  提交时间：2012/03/25
UNDOPED SEMI-INSULATING GAAS CRYSTALS GROWN BY A MODIFIED LOW-PRESSURE LEC METHOD 期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 卷号: 24, 期号: 11, 页码: 1089-1095
MO, PG; FAN, XQ; ZHOU, YD; WU, J
收藏  |  浏览/下载：13/0  |  提交时间：2012/03/25
REDISTRIBUTION OF EL2 IN UNDOPED SEMI-INSULATING GAAS DURING ANNEALING UNDER ARSENIC OVERPRESSURE 期刊论文
MATERIALS LETTERS, 1988, 卷号: 6, 期号: 5-6, 页码: 161-163
WU, J; MO, PG; ZOU, YX
收藏  |  浏览/下载：7/0  |  提交时间：2012/03/25

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