Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices

	Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices
	Zhao, FC ; Ding, Y ; Xia, GQ ; Tan, HZ
刊名	JOURNAL OF APPLIED PHYSICS
	2000
卷号	87 期号:3 页码:1482-1484
关键词	SEMI-INSULATING GAAS IMPACT IONIZATION
ISSN号	0021-8979
通讯作者	Zhao, FC, Chinese Acad Sci, Shanghai Inst Met, 865 Chang Ning Rd, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95869]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhao, FC,Ding, Y,Xia, GQ,et al. Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices[J]. JOURNAL OF APPLIED PHYSICS,2000,87(3):1482-1484.
APA	Zhao, FC,Ding, Y,Xia, GQ,&Tan, HZ.(2000).Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices.JOURNAL OF APPLIED PHYSICS,87(3),1482-1484.
MLA	Zhao, FC,et al."Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices".JOURNAL OF APPLIED PHYSICS 87.3(2000):1482-1484.