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CORC

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Growth and Characteristics of Epitaxial AlxGa1-xN by MOCVD 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6
Zhang, J; Guo, LW; Chen, Y; Xu, PQ; Ding, GJ; Peng, MZ; Jia, HQ; Zhou, JM; Chen, H
收藏  |  浏览/下载：10/0  |  提交时间：2013/09/17
High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy 期刊论文
POWDER DIFFRACTION, 2007, 卷号: 22, 期号: 3, 页码: 219
Wang, WJ; Sugita, K; Nagai, Y; Houchin, Y; Hashimoto, A; Yamamoto, A
收藏  |  浏览/下载：7/0  |  提交时间：2013/09/17
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72
Li, DB; Dong, X; Huang, JS; Liu, XL; Xu, ZY; Wang, XH; Zhang, Z; Wang, ZG
收藏  |  浏览/下载：17/0  |  提交时间：2013/09/24
Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 23
Wan, Q; Wang, TH; Liu, WL; Lin, CL
收藏  |  浏览/下载：12/0  |  提交时间：2013/09/23
Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates 期刊论文
APPLIED PHYSICS LETTERS, 1999, 卷号: 74, 期号: 5, 页码: 661
Cheng, LS; Zhou, K; Zhang, Z; Zhang, GY; Yang, ZJ; Tong, YZ
收藏  |  浏览/下载：10/0  |  提交时间：2013/09/24
The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 484
Wang, LS; Liu, XL; Zan, YD; Wang, D; Lu, DC; Wang, ZG; Wang, YT; Cheng, LS; Zhang, Z
收藏  |  浏览/下载：16/0  |  提交时间：2013/09/23
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 478
Yang, HF; Han, PD; Cheng, LS; Zhang, Z; Duan, SK; Teng, XG
收藏  |  浏览/下载：7/0  |  提交时间：2013/09/18
MOVPE growth of GaN and LED on (111) MgAl2O4 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 189, 页码: 197
Duan, SK; Teng, XG; Wang, YT; Li, GH; Jiang, HX; Han, P; Lu, DC
收藏  |  浏览/下载：10/0  |  提交时间：2013/09/18
DIODES  
Microstructures of GaN films grown by low pressure metalorganic vapor phase epitaxy on (01(1)over-bar2) sapphire substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 191, 期号: 4, 页码: 641
Cheng, LS; Zhang, Z; Zhang, GY; Yang, ZJ
收藏  |  浏览/下载：11/0  |  提交时间：2013/09/18
Transmission electron microscopy study of the microstructure of a GaN film grown on sapphire by organometallic vapor phase epitaxy 期刊论文
DEFECT AND DIFFUSION FORUM, 1997, 卷号: 148, 页码: 122
Yu, DP; Chen, LS; Zhang, GY; Tong, YZ; Yang, ZJ; Jin, SX; You, LP; Liu, ZQ; Zhang, Z
收藏  |  浏览/下载：8/0  |  提交时间：2013/09/23

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