Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates

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	Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates
	Cheng, LS ; Zhou, K ; Zhang, Z ; Zhang, GY ; Yang, ZJ ; Tong, YZ
刊名	APPLIED PHYSICS LETTERS
	1999
卷号	74 期号:5 页码:661
关键词	DEPOSITION FILMS
ISSN号	0003-6951
通讯作者	Cheng, LS (reprint author), Chinese Acad Sci, Beijing Lab Electron Microscopy, Ctr Condensed Matter Phys, POB 2724, Beijing 100080, Peoples R China.
中文摘要	Investigations on GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates indicated that the mechanisms by way of which GaN buffer layers relax stresses introduced by the lattice mismatch and thermal expansion coefficient difference between GaN epilayer and sapphire substrate are related to both the crystallographic structure of GaN and thickness of the buffer layers. Beside forming misfit dislocations, mismatch-induced stresses can also be relaxed by forming stacking faults and microtwin boundaries parallel to (11-1) of GaN near the interface between GaN and sapphire substrate in cubic GaN buffer layers. It was found that, in cubic GaN buffer layers, there exists a critical thickness within which the stacking faults and/or microtwin boundaries parallel to (11-1) of GaN can be formed. This critical value is determined to be 50 nm. (C) 1999 American Institute of Physics. [S0003-6951(99)02105-1].
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50201]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Cheng, LS,Zhou, K,Zhang, Z,et al. Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates[J]. APPLIED PHYSICS LETTERS,1999,74(5):661.
APA	Cheng, LS,Zhou, K,Zhang, Z,Zhang, GY,Yang, ZJ,&Tong, YZ.(1999).Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates.APPLIED PHYSICS LETTERS,74(5),661.
MLA	Cheng, LS,et al."Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates".APPLIED PHYSICS LETTERS 74.5(1999):661.