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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Dual Solutions of MHD Boundary Layer Flow of a Micropolar Fluid with Weak Concentration over a Stretching/Shrinking Sheet 其他 2017-01-01 Khan, Z. H.; Qasim, M.; Ishfaq, Naeema; Khan, W. A. 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 MHD  micropolar fluid  stretching/shrinking sheet  exact and dual solutions  STAGNATION POINT FLOW  FINITE THIN-FILM  HEAT-TRANSFER  SHRINKING SHEET  UNSTEADY-FLOW  WALL PROBLEM  SURFACE   Homotopy based solutions of the Navier-Stokes equations for a porous channel with orthogonally moving walls 期刊论文 physics of fluids, 2010 Xu, Hang; Lin, Zhi-Liang; Liao, Shi-Jun; Wu, Jie-Zhi; Majdalani, Joseph 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/12 algebra  boundary layers  channel flow  flow through porous media  laminar flow  Navier-Stokes equations  nonlinear differential equations  partial differential equations  viscosity  BOUNDARY-LAYER-FLOWS  LAMINAR-FLOW  DIFFERENT PERMEABILITY  ASYMPTOTIC SOLUTION  CONTRACTING WALLS  SERIES SOLUTIONS  GENERAL-APPROACH  LARGE INJECTION  SUCTION  FLUID   A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs 其他 2009-01-01 He, Jin; Zhang, Lining; Zhang, Jian; Ma, Chenyue; Liu, Feilong; Chan, Mansun 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 non-classical MOS transistor  surrounding-gate MOSFETs  device physics  surface potential model  non-charge-sheet approximation  MOS-TRANSISTOR  CHARGE  PERFORMANCE