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Studies of 6H-SiC devices 会议论文
korea-china joint symposium on smiconductor physics and device applications, seoul, south korea, dec 05-09, 2001
Wang SR; Liu ZL
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15


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