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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Interplay between fracture and domain switching of ferroelectrics 会议论文 FRACTURE AND STRENGTH OF SOLIDS VI, PTS 1 AND 2, 6th International Conference on Fracture and Strength of Solids, Bali, INDONESIA, Web of Science Cui, YQ; Yang, W 收藏  |  浏览/下载：2/0 Effect of constitute conductivity on effective complex permittivity of two-phase composites 会议论文 作者:  Chen, Xiaolin;  Cheng, Yonghong;  Wu, Kai;  Meng, Yongpeng;  Wu, Shengnan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/18 spherical inclusions  Effective permittivity  composite material   Cleavage initiation mechanism in notched specimens of steel with carbides and inclusions 会议论文 Turin, Italy, March 20, 2005 - March 25, 2005 作者:  Wang, G.Z.;  Chen, J.H. 收藏  |  浏览/下载：28/0  |  提交时间：2020/11/15 Carbides  Fracture  Integrated circuits  Carbide particles  Cleavage fracture  Crack nucleation  Initiation mechanism  Initiation sites  Microscopic observations  Notched specimens  Spherical inclusion   The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 metalorganic chemical vapor deposition  cubic GaN  hexagonal phase content  4-circle X-ray double crystal diffraction  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  THIN-FILMS  SILICON  GAAS   A Trefftz collocation method for multiple interacting spherical nano-inclusions considering the interface stress effect. 会议论文 ENGINEERING ANALYSIS WITH BOUNDARY ELEMENTS, 172-183, 2018 作者:  Dong, Leiting;  Wang, Junbo;  Yan, Peng;  Guo, Zaoyang 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/25 Trefftz  collocation  method  Spherical  harmonics  Interface  stress  effect  Generalized  Young-Laplace  equations