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Design of suppressing optical and recombination losses in ultrathin CuInGaSe2 solar cells by Voronoi nanocavity arrays 会议论文
作者:  Wang, Yi-Chung;  Chen, Chia-Wei;  Su, Teng-Yu;  Yang, Tzu-Yi;  Liu, Wen-Wu
收藏  |  浏览/下载：10/0  |  提交时间：2020/12/18
Design and test of a RadOptic detector optimized for pulsed MeV gamma rays 会议论文
作者:  Peng, Bodong;  Song, Yan;  Hei, Dongwei;  Zhao, Jun
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/19
Dielectronic recombination of Be-like argon at the CSRm 会议论文
Cairns, AUSTRALIA, JUL 26-AUG 01, 2017
作者:  Zhao, D. M.;  Huang, Z. K.;  Wen, W. Q.;  Xu, X.;  Wang, S. X.
收藏  |  浏览/下载：22/0  |  提交时间：2018/08/20
Effect of La/sub 2/O/sub 3/ and CeO/sub 2/ on Nb/sub 2/O/sub 5/ doped TiO/sub 2/ ceramic varistors 会议论文
Key Engineering Materials, 3rd International Conference on High-Performance Ceramics (CICC-3), Shenzhen, China, INSPEC
Jia Mi; Zilong Tang; Shaohua Luo; Zhongtai Zhang
收藏  |  浏览/下载：4/0
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
He C.-F.; Qin L.; Li J.; Cheng L.-W.; Liang X.-M.; Ning Y.-Q.; Wang L.-J.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文
Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W.
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25
A set of ZnO/MgZnO heterostructures with well widths  Lw  varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton  while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness  the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.  
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004
Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC
收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.)
收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29

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