Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

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	Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
	Kong LM ; Cai JF ; Wu ZY ; Gong Z ; Niu ZC ; Feng ZC
	2006
会议名称	3rd asian conference on chemical vapor deposition
会议日期	nov 12-14, 2004
会议地点	taipei, taiwan
关键词	time-resolved photoluminescence
页码	498 (1-2): 188-192
通讯作者	feng, zc, natl taiwan univ, grad inst electroopt engn, taipei, taiwan. 电子邮箱地址: zcfeng@cc.ee.nut.edu.tw
中文摘要	two types of inas self-assembled quantum dots (qds) were prepared by molecular beam epitaxy. atomic force microscopy (afm) measurements showed that, compared to qds grown on gaas substrate, qds grown on ingaas layer has a significantly enhanced density. the short spacing (several nanometer) among qds stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (pl) peak. we study systematically the dependence of pl lifetime on the qds size, density and temperature (1). we found that, below 50 k, the pl lifetime is insensitive to temperature, which is interpreted from the localization effects. as t increases, the pl lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. the increase of carriers in qds migrated from barriers and wetting layer (wl), and the redistribution of carriers among qds enhance the pl lifetime as t increases. the thermal emission and non-radiative recombination have effects to reduce the pl lifetime at higher t. as a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in qds, and qds with different densities have different pl lifetime dependence on the qds size. (c) 2005 elsevier b.v. all rights reserved.
英文摘要	two types of inas self-assembled quantum dots (qds) were prepared by molecular beam epitaxy. atomic force microscopy (afm) measurements showed that, compared to qds grown on gaas substrate, qds grown on ingaas layer has a significantly enhanced density. the short spacing (several nanometer) among qds stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (pl) peak. we study systematically the dependence of pl lifetime on the qds size, density and temperature (1). we found that, below 50 k, the pl lifetime is insensitive to temperature, which is interpreted from the localization effects. as t increases, the pl lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. the increase of carriers in qds migrated from barriers and wetting layer (wl), and the redistribution of carriers among qds enhance the pl lifetime as t increases. the thermal emission and non-radiative recombination have effects to reduce the pl lifetime at higher t. as a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in qds, and qds with different densities have different pl lifetime dependence on the qds size. (c) 2005 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; natl taiwan univ, grad inst electroopt engn, taipei, taiwan; natl taiwan univ, dept elect engn, taipei, taiwan; xiamen univ, dept phys, xiamen 361005, peoples r china; chinese acad sci, inst semicond, natl lab supperlattice & microstruct, beijing 100083, peoples r china
收录类别	其他
会议录	thin solid films
会议录出版者	elsevier science sa ; po box 564, 1001 lausanne, switzerland
会议录出版地	po box 564, 1001 lausanne, switzerland
学科主题	半导体物理
语种	英语
ISSN号	0040-6090
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10046]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kong LM,Cai JF,Wu ZY,et al. Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots[C]. 见:3rd asian conference on chemical vapor deposition. taipei, taiwan. nov 12-14, 2004.