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Properties of Sr-doped BaTiO/sub 3/ based X7R ceramic materials 会议论文
Key Engineering Materials, 3rd International Conference on High-Performance Ceramics (CICC-3), Shenzhen, China, INSPEC
Hai Wen; Xiaohui Wang; Longtu Li; Zhilun Gui
收藏  |  浏览/下载:5/0
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载:167/71  |  提交时间:2010/03/29
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Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Kang JY; Shen YW; Wang ZG
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
24th ieee international symposium on compound semiconductors, san diego, california, sep 08-11, 1997
作者:  Jiang DS
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/15
Hydrogen related defects in InP 会议论文
symposium on light emitting devices for optoelectronic applications / 28th state-of-the-art program on compound semiconductors at 193th electrochemical-soc meeting, san diego, ca, may 03-08, 1998
Han YJ; Liu XL; Jiao JH; Lin LY
收藏  |  浏览/下载:11/0  |  提交时间:2010/10/29


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