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科研机构
半导体研究所 [16]
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会议论文 [16]
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2008 [5]
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光电子学 [6]
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内容类型:会议论文
专题:半导体研究所
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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
A 5.6-mW Power Dissipation CMOS Frequency Synthesizer for L1/L2 Dual-Band GPS Application
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Jia HL
;
Ren T
;
Lin M
;
Chen FX
;
Shi Y
;
Dai FF
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
PLL
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
zinc oxide
defect
vacancy
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Li, Y
;
Yi, XY
;
Wang, XD
;
Guo, JX
;
Wang, LC
;
Wang, GH
;
Yang, FH
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2010/03/09
GaN
LED
plasma
damage
etch
ICP
PECVD
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
收藏
  |  
浏览/下载:98/31
  |  
提交时间:2010/03/29
InAs quantum dot
photoluminescence
modulation-doped
field effect transistor
MU-M
CAPPING LAYER
Growth and characterization of semi-insulating GaN films grown by MOCVD
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Fang, CB
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Wang, CM
;
Li, JM
收藏
  |  
浏览/下载:202/36
  |  
提交时间:2010/03/29
MOCVD
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
收藏
  |  
浏览/下载:182/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION
An ambient proof and wide tuning range LC VCO with automatic amplitude control for tuner applications
会议论文
4th international conference on communications, circuits and systems (icccas 2006), guilin, peoples r china, jun 25-28, 2006
Yan, J (Yan, Jun)
;
Ma, DS (Ma, Desheng)
;
Mao, W (Mao, Wei)
;
Gu, M (Gu, Ming)
;
Shi, Y (Shi, Yin)
;
Dai, FF (Dai, Fa Foster)
收藏
  |  
浏览/下载:175/34
  |  
提交时间:2010/03/29
CONVERSION
OSCILLATORS
NOISE
Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V
会议论文
conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005
Zhang, SJ
;
Wen, JM
;
Song, HP
;
Zhu, NH
收藏
  |  
浏览/下载:84/26
  |  
提交时间:2010/03/29
semiconductor laser diode
subtraction method
scattering parameters
intrinsic response
thermal effect
FREQUENCY-RESPONSE
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