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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Research on the band-gap of InN grown on siticon substrates 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM 收藏  |  浏览/下载：100/15  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  WURTZITE INN  NITRIDE  ABSORPTION  ALLOYS  FILMS   Optical properties of AIInGaN quaternary alloys 会议论文 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK 收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29 LIGHT-EMITTING-DIODES  LOCALIZED EXCITONS  LUMINESCENCE  RELAXATION  SILICON  BAND   Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 SI-GE ALLOYS  GROWTH  LAYERS   Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  STRAIN RELAXATION