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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文    专题：兰州大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Surface morphology and roughness of Cu thin films prepared by ionized cluster beam deposition 会议论文 2012 International Conference on Frontiers of Advanced Materials and Engineering Technology, FAMET 2012, Xiamen, China, January 4, 2012 - January 5, 2012 作者:  Cao, Bo;  Yang, Tongrui;  Li, Gongping;  Cho, Seong Jin;  Kim, Hee 收藏  |  浏览/下载：2/0  |  提交时间：2017/01/20 Surface morphology  Atomic force microscopy  Chemical modification  Copper  Deposition  Engineering technology  Ionization  Ions  Morphology  Semiconducting silicon compounds  Surface roughness  Surfaces  Thin films  Vapor deposition  Acceleration voltages  Average grain size  Cu Films  Cu thin film  Deposition conditions  Ionized cluster beam deposition  Ionized cluster beams  P-type Si   Effect of substrate temperature on the preparation of Cu 2ZnSnSe4 thin films 会议论文 2011 3rd International Conference on Mechanical and Electronics Engineering, ICMEE 2011, Hefei, China, September 23, 2011 - September 25, 2011 作者:  Han, Lei;  Chen, Zhesheng;  Wan, Lei;  Xu, Jinzhang, 收藏  |  浏览/下载：4/0  |  提交时间：2017/01/20 Film preparation  Electrodeposition  Electronics engineering  Morphology  Scanning electron microscopy  Selenium  Semiconducting selenium compounds  Substrates  Thin films  Tin  X ray diffraction  Different substrates  Energy dispersive spectrometers  Impurity phasis  Raman scattering spectra  Selenization  Substrate temperature   Boron depth profiles in a-Si1-xCx:H(B) films after thermal annealing 会议论文 Shanghai, China, April 15, 1991 - April 17, 1991 作者:  Liao, Chang G.;  Zheng, Zhi H.;  Wang, Yong Q.;  Yang, Sheng S. 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/17 Silicon Carbide  Boron  Heat Treatment  Annealing  Semiconducting Films  Amorphous  Silicon Carbide  Amorphous  Boron Doping  Depth Profiles  Hydrogenated Amorphous Silicon Carbide  Thermal Stability   Boron depth profiles in a-Si1-xCx:H(B) films after thermal annealing 会议论文 1991 International Conference on Thin Film Physics and Applications, Shanghai, China, April 15, 1991 - April 17, 1991 作者:  Liao, Changgeng;  Zheng, Zhihao;  Wang, Yongqiang;  Yang, Shengsheng 收藏  |  浏览/下载：1/0  |  提交时间：2017/01/20 Semiconducting Silicon  Heat Treatment  Annealing  Semiconducting Films  Photovoltaic Effects  Semiconductor Materials  Doping  Solar Cells  Silicon  Boron Doped Silicon  Hydrogenated Amorphous Silicon  Thermal Annealing  Wind Band Gap Semiconductors