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Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文
physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850
Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J
收藏  |  浏览/下载：96/5  |  提交时间：2011/07/05
Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4213-4217
Bao ZH (Bao Zhi-Hua); Jing WP (Jing Wei-Ping); Luo XD (Luo Xiang-Dong); Tan PH (Tan Ping-Heng)
收藏  |  浏览/下载：125/0  |  提交时间：2010/03/29
Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063
Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC
收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12
Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者:  Xu YQ
收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12
Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices 期刊论文
physica e-low-dimensional systems & nanostructures, 2001, 卷号: 11, 期号: 4, 页码: 384-390
Zhuang QD; Yoon SF; Li HX; Li JM; Zeng YP; Kong MY; Lin LY
收藏  |  浏览/下载：93/7  |  提交时间：2010/08/12
Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces 期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 10, 页码: 5444-5446
Shen WZ; Jiang LF; Yu G; Lai ZY; Wang XG; Shen SC; Cao X
收藏  |  浏览/下载：94/14  |  提交时间：2010/08/12
Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well 期刊论文
physical review b, 2001, 卷号: 63, 期号: 11, 页码: art.no.113305
作者:  Tan PH
收藏  |  浏览/下载：83/1  |  提交时间：2010/08/12
Electronic characteristics of InAs self-assembled quantum dots 会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL; Feng SL; Zhu HJ; Ning D; Chen F
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文
ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425
Ho WY; Surya C; Tong KY; Lu LW; Ge WK
收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12
Electronic characteristics of InAs self-assembled quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2000, 卷号: 7, 期号: 3-4, 页码: 383-387
Wang HL; Feng SL; Zhu HJ; Ning D; Chen F
收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12

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