Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices
Zhuang QD ; Yoon SF ; Li HX ; Li JM ; Zeng YP ; Kong MY ; Lin LY
刊名physica e-low-dimensional systems & nanostructures
2001
卷号11期号:4页码:384-390
关键词quantum dots superlattice vertical alignment photoluminescence infrared absorption INFRARED PHOTODETECTORS GROWTH PHOTOLUMINESCENCE HETEROSTRUCTURES SPECTROSCOPY DETECTOR
ISSN号1386-9477
通讯作者zhuang qd,nanyang technol univ,sch elect & elect engn blk s1,nanyang ave,singapore 639798,singapore.
中文摘要the self-organization growth of in0.32ga0.68as/gaas quantum dots (qds) superlattices is investigated by molecular beam epitaxy. it is found that high growth temperature and low growth rate are favorable for the formation of perfect vertically aligned qds superlattices. the aspect ratio (height versus diameter) of qd increases from 0.16 to 0.23 with increase number of bi-layer. we propose that this shape change play a significant role to improve the uniformity of qds superlattices. features in the variable temperature photoluminescence characteristics indicate the high uniformity of the qds. strong infrared absorption in the 8-12 mum was observed. our results suggest the promising applications of qds in normal sensitive infrared photodetectors. (c) 2001 elsevier science b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/12008]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Zhuang QD,Yoon SF,Li HX,et al. Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices[J]. physica e-low-dimensional systems & nanostructures,2001,11(4):384-390.
APA Zhuang QD.,Yoon SF.,Li HX.,Li JM.,Zeng YP.,...&Lin LY.(2001).Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices.physica e-low-dimensional systems & nanostructures,11(4),384-390.
MLA Zhuang QD,et al."Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices".physica e-low-dimensional systems & nanostructures 11.4(2001):384-390.
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