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| The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文 physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155 作者: Li JB![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:59/6  |  提交时间:2011/07/05
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| Native p-type transparent conductive CuI via intrinsic defects 期刊论文 journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 54907 Wang J; Li JB; Li SS
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:36/0  |  提交时间:2012/01/06
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| Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations 期刊论文 european physical journal b, 2010, 卷号: 77, 期号: 3, 页码: 345-349 Zhang YJ (Zhang Y. J.); Shi HL (Shi H. -L.); Wang SX (Wang S. X.); Zhang P (Zhang P.); Li RW (Li R. W.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:32/0  |  提交时间:2010/11/27 |
| The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文 journal of optics, 2010, 卷号: 12, 期号: 5, 页码: art. no. 055203 Huang X (Huang X.); Zhang XH (Zhang X. H.); Zhu YG (Zhu Y. G.); Li T (Li T.); Han LF (Han L. F.); Shang XJ (Shang X. J.); Ni HQ (Ni H. Q.); Niu ZC (Niu Z. C.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:81/6  |  提交时间:2010/08/17
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| Origins of magnetism in transition metal doped Cul 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043713 Wang J (Wang Jing); Li JB (Li Jingbo); Li SS (Li Shu-Shen)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:86/0  |  提交时间:2010/10/11
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| Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者: Zhang XW ; You JB ; Yin ZG![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:71/1  |  提交时间:2010/03/08
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| Spin states in InAs/AlSb/GaSb semiconductor quantum wells 期刊论文 physical review b, 2009, 卷号: 80, 期号: 3, 页码: art. no. 035303 作者: Li J![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:155/2  |  提交时间:2010/03/08
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| Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 12, 页码: art. no. 123705 Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:82/4  |  提交时间:2010/03/08
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| Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902 Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:93/14  |  提交时间:2010/03/08
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| Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots 期刊论文 superlattices and microstructures, 2009, 卷号: 46, 期号: 3, 页码: 498-506 Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:49/4  |  提交时间:2010/03/08
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