Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots

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	Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots
	Chen J ; Fan WJ ; Xu Q ; Zhang XW ; Li SS ; Xia JB
刊名	superlattices and microstructures
	2009
卷号	46 期号:3 页码:498-506
关键词	Band structure k.p method Quantum dots Diluted nitride Optical gain
ISSN号	0749-6036
通讯作者	fan wj nanyang technol univ sch elect & elect engn singapore 639798 singapore. e-mail address: ewjfan@ntu.edu.sg
中文摘要	the shape of truncated square-based pyramid quantum dots (qds) is similar to that of real qds in experiments. the electronic band structures and optical gain of inas1-xnx/gaas qds are calculated by using the 10-band k.p model, and the strain is calculated by the valence force field (vff) method. when the top part of the qd is truncated, greater truncation corresponds to a flatter shape of the qd. the truncation changes the strain distribution and the confinement in the z direction. a flatter qd has a greater c1-hh1 transition energy, greater transition matrix element, less detrimental effect of higher excited transition, and higher saturation gain and differential gain. the trade-off between these properties must be considered. from our results, a truncated qd with half of its top part removed has better overall performance. this can provide guidance to growing qds in experiments in which the proper growing conditions can be controlled to achieve required properties. (c) 2009 elsevier ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
资助信息	astar 0621200015 acrf rgm 1/07 national natural science foundation 90301007 60521001wei-jun fan would like to acknowledge the support from astar (serc grant no. 0621200015) and acrf rgm 1/07; jian-bai xia would like to acknowledge the support from the national natural science foundation no. 90301007 and 60521001.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6993]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen J,Fan WJ,Xu Q,et al. Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots[J]. superlattices and microstructures,2009,46(3):498-506.
APA	Chen J,Fan WJ,Xu Q,Zhang XW,Li SS,&Xia JB.(2009).Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots.superlattices and microstructures,46(3),498-506.
MLA	Chen J,et al."Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots".superlattices and microstructures 46.3(2009):498-506.