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科研机构
半导体研究所 [16]
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期刊论文 [16]
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2011 [1]
2009 [2]
2008 [3]
2007 [3]
2006 [2]
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半导体物理 [16]
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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
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  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903
Li MC
;
Qiu YX
;
Liu GJ
;
Wang YT
;
Zhang BS
;
Zhao LC
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  |  
浏览/下载:31/0
  |  
提交时间:2010/03/08
X-RAY-DIFFRACTION
MOLECULAR-BEAM-EPITAXY
FILMS
MISFIT
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
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浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films
期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 16, 页码: art. no. 165004
Sun, LL
;
Yan, FW
;
Gao, HY
;
Zhang, HX
;
Zeng, YP
;
Wang, GH
;
Li, JM
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浏览/下载:48/0
  |  
提交时间:2010/03/08
P-TYPE GAN
SAPPHIRE
PROPERTY
Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 5, 页码: 3346-3349 part 1
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Yang, JK
;
Zeng, YP
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  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
HVPE
GaN
sapphire
nonpolar
semipolar
Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073712
作者:
Wang Y
;
Zhang XW
;
Yin ZG
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浏览/下载:44/0
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy
期刊论文
physical review b, 2007, 卷号: 75, 期号: 18, 页码: art.no.184103
Tang CY
;
Li FH
;
Wang R
;
Zou J
;
Zheng XH
;
Liang JW
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  |  
浏览/下载:50/0
  |  
提交时间:2010/03/29
IMAGE DECONVOLUTION
A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors
期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 2, 页码: 516-518
Hu, WG (Hu Wei-Guo)
;
Liu, XL (Liu Xiang-Lin)
;
Zhang, PF (Zhang Pan-Feng)
;
Zhao, FA (Zhao Feng-Ai)
;
Jiao, CM (Jiao Chun-Mei)
;
Wei, HY (Wei Hong-Yuan)
;
Zhang, RQ (Zhang Ri-Qing)
;
Wu, JJ (Wu Jie-Jun)
;
Cong, GW (Cong Guang-Wei)
;
Pan, Y (Pan Yi)
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浏览/下载:40/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 21, 页码: 6690-6693
Hao RT (Hao Ruiting)
;
Xu YQ (Xu Yingqiang)
;
Zhou ZQ (Zhou Zhiqiang)
;
Ren ZW (Ren Zhengwei)
;
Ni HQ (Ni Haiqiao)
;
He ZH (He Zhenhong)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers
期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.093902
Deng JJ
;
Zhao JH
;
Bi JF
;
Niu ZC
;
Yang FH
;
Wu XG
;
Zheng HZ
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  |  
浏览/下载:99/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM-EPITAXY
ROOM-TEMPERATURE FERROMAGNETISM
SPINTRONICS
MULTILAYER
FILMS
CRAS
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