Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy

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	Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy
	Tang CY ; Li FH ; Wang R ; Zou J ; Zheng XH ; Liang JW
刊名	physical review b
	2007
卷号	75 期号:18 页码:art.no.184103
关键词	IMAGE DECONVOLUTION
ISSN号	issn: 1098-0121
通讯作者	li, fh, chinese acad sci, inst phys, beijing natl lab condensed matter phys, pob 603, beijing 100080, peoples r china. 电子邮箱地址: lifh@aphy.iphy.ac.cn
中文摘要	the defects in 3c-sic film grown on (001) plane of si substrate were studied using a 200 kv high-resolution electron microscope with point resolution of 0.2 nm. a posterior image processing technique, the image deconvolution, was utilized in combination with the image contrast analysis to distinguish atoms of si from c distant from each other by 0.109 nm in the [110] projected image. the principle of the image processing technique utilized and the related image contrast theory is briefly presented. the procedures of transforming an experimental image that does not reflect the crystal structure intuitively into the structure map and of identifying si and c atoms from the map are described. the atomic configurations for a 30 degrees partial dislocation and a microtwin have been derived at atomic level. it has been determined that the 30 degrees partial dislocation terminates in c atom and the segment of microtwin is sandwiched between two 180 degrees rotation twins. the corresponding stacking sequences are derived and atomic models are constructed according to the restored structure maps for both the 30 degrees partial dislocation and microtwin. images were simulated based on the two models to affirm the above-mentioned results.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9400]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tang CY,Li FH,Wang R,et al. Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy[J]. physical review b,2007,75(18):art.no.184103.
APA	Tang CY,Li FH,Wang R,Zou J,Zheng XH,&Liang JW.(2007).Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy.physical review b,75(18),art.no.184103.
MLA	Tang CY,et al."Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy".physical review b 75.18(2007):art.no.184103.