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科研机构
半导体研究所 [9]
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期刊论文 [6]
会议论文 [3]
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2010 [1]
2009 [2]
2006 [2]
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1991 [1]
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半导体材料 [9]
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Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb
期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010
Islam MR (Islam M. R.)
;
Hasan MM (Hasan M. M.)
;
Chen N (Chen N.)
;
Fukuzawa M (Fukuzawa M.)
;
Yamada M (Yamada M.)
收藏
  |  
浏览/下载:261/25
  |  
提交时间:2010/09/20
DILUTED MAGNETIC SEMICONDUCTORS
PHONON
FERROMAGNETISM
TEMPERATURE
GA1-XMNXAS
SPECTRA
STRAIN
LAYERS
GAAS
SPIN
Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing
期刊论文
crystal research and technology, 2009, 卷号: 44, 期号: 2, 页码: 215-220
Islam MR
;
Chen NF
;
Yamada M
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  |  
浏览/下载:224/44
  |  
提交时间:2010/03/08
Raman scattering
ferromagnetic
semiconductor
GaMnAs
Mn ions implantation
deposition
Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 2, 页码: 278-281
作者:
Song HP
;
Jiao CM
;
Wei HY
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  |  
浏览/下载:200/82
  |  
提交时间:2010/03/08
Nanostructures
Metalorganic chemical vapor deposition
Zinc compounds
Semiconducting II-VI materials
Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 184-187
Islam MR (Islam M. R.)
;
Chen NF (Chen N. F.)
;
Yamada M (Yamada M.)
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/04/11
Raman scattering
ferromagnetic semiconductor GaMnN
ion implantation
GROWTH
GAN
Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Islam MR
;
Chen NF
;
Yamada M
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  |  
浏览/下载:126/8
  |  
提交时间:2010/03/29
Raman scattering
Hydrogen behavior in GaN epilayers grown by NH3-MBE
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
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  |  
浏览/下载:99/8
  |  
提交时间:2010/08/12
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon
会议论文
symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting, san francisco, ca, apr 14-17, 1998
Yue GZ
;
Chen LF
;
Wang Q
;
Iwaniczko E
;
Kong GL
;
Baugh J
;
Wu Y
;
Han DX
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/10/29
VIBRATIONAL-SPECTRA
SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON
期刊论文
journal of applied physics, 1991, 卷号: 70, 期号: 7, 页码: 3802-3807
RIZK R
;
DEMIERRY P
;
SONG C
;
BALLUTAUD D
;
PAJOT B
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
MICROSCOPIC STRUCTURE
ACCEPTOR PAIRS
DOPED SILICON
BORON
DEFECT
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