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| Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者: Song HP ; Wei HY; Li CM; Jiao CM
  收藏 | 浏览/下载：66/4 | 提交时间：2011/07/05
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| Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者: Pan X
收藏 | 浏览/下载：81/5 | 提交时间：2011/07/05
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| Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者: Yang JK; Wei TB; Duan RF
收藏 | 浏览/下载：73/3 | 提交时间：2010/03/08
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| Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏 | 浏览/下载：49/0 | 提交时间：2010/04/11
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| Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者: Xu B
收藏 | 浏览/下载：55/0 | 提交时间：2010/04/11
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| Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer 期刊论文
journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273
Shen WJ; Wang J; Wang QY; Duan Y; Zeng YP
收藏 | 浏览/下载：49/0 | 提交时间：2010/04/11
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| Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 25, 期号: 4, 页码: 592-596
作者: Jin P; Xu B
收藏 | 浏览/下载：60/0 | 提交时间：2010/03/17
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| Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏 | 浏览/下载：7/0 | 提交时间：2010/11/15
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| Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 429-432
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏 | 浏览/下载：31/0 | 提交时间：2010/08/12
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