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| The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
  收藏 | 浏览/下载：36/0 | 提交时间：2012/01/06
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| The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者: Bi Y ; Lin DF; Peng EC
收藏 | 浏览/下载：19/0 | 提交时间：2011/09/14
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| Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 1, 页码: 61-64
Zhao L; Diao HW; Zeng XB; Zhou CL; Li HL; Wang WJ
收藏 | 浏览/下载：214/74 | 提交时间：2010/04/04
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| The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏 | 浏览/下载：44/0 | 提交时间：2010/04/11
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| Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文
science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814
Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H
收藏 | 浏览/下载：326/7 | 提交时间：2010/04/11
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| Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 10-15
Chen CY; Chen WD; Song SF; Hsu CC
收藏 | 浏览/下载：441/2 | 提交时间：2010/08/12
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| Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文
applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
作者: Jin P
收藏 | 浏览/下载：459/3 | 提交时间：2010/08/12
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| The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 19-24
Chen Z; Lu DC; Han P; Liu XL; Wang XH; Li YF; Yuan HR; Lu Y; Bing LD; Zhu QS; Wang ZG; Wang XF; Yan L
收藏 | 浏览/下载：41/0 | 提交时间：2010/08/12
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| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 188-194
Chen Z; Lu DH; Yuan HR; Han P; Liu XL; Li YF; Wang XH; Lu Y; Wang ZG
收藏 | 浏览/下载：102/11 | 提交时间：2010/08/12
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| THE ADSORPTION OF O2 ON FESI SURFACES 期刊论文
surface science, 1992, 卷号: 269, 期号: 0, 页码: 1022-1031
HSU CC; DING SA; MA MS; WU JX; LIU XM; JI MR
收藏 | 浏览/下载：12/0 | 提交时间：2010/11/15
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