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Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2081-2083
Lu LW; Chen TJ; Shen B; Wang JN; Ge WK
收藏  |  浏览/下载：65/32  |  提交时间：2010/03/17
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate 期刊论文
journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
作者:  Zhang JY;  Jiang DS
收藏  |  浏览/下载：81/0  |  提交时间：2010/08/12
Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 99-104
Lu LW; Fong WK; Zhu CF; Leung BH; Surya C; Wang J; Ge WK
收藏  |  浏览/下载：100/14  |  提交时间：2010/08/12
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 766-769
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：97/14  |  提交时间：2010/08/12
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 535-540
Liu JP; Kong MY; Li JP; Liu XF; Huang DD; Sun DZ
收藏  |  浏览/下载：33/0  |  提交时间：2010/08/12
Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy 期刊论文
journal of crystal growth, 1997, 卷号: 181, 期号: 4, 页码: 441-445
Liu JP; Liu XF; Li JP; Sun DZ; Kong MY
收藏  |  浏览/下载：18/0  |  提交时间：2010/11/17
Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys 期刊论文
rare metals, 1997, 卷号: 16, 期号: 2, 页码: 122
刘学锋; 李建平; 孙殿照
收藏  |  浏览/下载：5/0  |  提交时间：2010/11/23
Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy 期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1996, 卷号: 119, 期号: 4, 页码: 510-514
Fan TW; Zou LF; Wang ZG; Hemment PLF; Greaves SJ; Watts JF
收藏  |  浏览/下载：19/0  |  提交时间：2010/11/17

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