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| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者: Pan X
  收藏 | 浏览/下载：20/0 | 提交时间：2011/09/14
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| Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM; Wang CY; Chen YH; Wang ZG
收藏 | 浏览/下载：47/0 | 提交时间：2010/04/11
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| Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏 | 浏览/下载：49/0 | 提交时间：2010/04/11
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| Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者: Zhao DG
收藏 | 浏览/下载：299/12 | 提交时间：2010/08/12
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| Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348
Zheng XH; Wang YT; Feng ZH; Yang H; Chen H; Zhou JM; Liang JW
收藏 | 浏览/下载：39/0 | 提交时间：2010/08/12
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| Hydrogen-dependent lattice dilation in GaN 期刊论文
semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Zhang JP; Wang XL; Sun DZ; Kong MY
收藏 | 浏览/下载：35/0 | 提交时间：2010/08/12
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| Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 530-533
Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J
收藏 | 浏览/下载：56/0 | 提交时间：2010/08/12
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| Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J
收藏 | 浏览/下载：14/0 | 提交时间：2010/11/15
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| InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001) 期刊论文
journal of crystal growth, 1999, 卷号: 197, 期号: 1-2, 页码: 95-98
作者: Xu B
收藏 | 浏览/下载：49/0 | 提交时间：2010/08/12
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