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科研机构
半导体研究所 [32]
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期刊论文 [29]
会议论文 [3]
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2013 [2]
2011 [5]
2010 [1]
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半导体材料 [32]
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浏览/检索结果:
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Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method
期刊论文
materials science forum, 2013, 页码: 740-742
Lin Dong
;
Liu Zheng
;
Xingfang Liu
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浏览/下载:8/0
  |  
提交时间:2014/05/16
Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method
期刊论文
journal of vacuum science & technology a: vacuum, surfaces, and films, 2013, 卷号: 31, 期号: 3, 页码: 031404 - 031404-5
Jinming Liu, Youwen Zhao, Zhiyuan Dong, Fengyun Yang, Fenghua Wang
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浏览/下载:18/0
  |  
提交时间:2014/03/18
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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  |  
浏览/下载:90/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
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  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
期刊论文
optics express, 2011, 卷号: 19, 期号: 2, 页码: 1065-1071
作者:
Wei TB
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浏览/下载:44/4
  |  
提交时间:2011/07/05
OUTPUT
ENHANCEMENT
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.)
;
Zhang XW (Zhang X. W.)
;
Fan YM (Fan Y. M.)
;
Tan HR (Tan H. R.)
;
Yin ZG (Yin Z. G.)
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  |  
浏览/下载:27/0
  |  
提交时间:2010/12/28
Cubic boron nitride
Doping
Ion beam assisted deposition
X-ray photoelectron spectroscopy
RAY PHOTOELECTRON-SPECTROSCOPY
VAPOR-DEPOSITION
SI
NUCLEATION
GROWTH
Fabrication of high quality two-dimensional photonic crystal mask layer patterns
期刊论文
optical and quantum electronics, 2009, 卷号: 41, 期号: 3, 页码: 151-158
Peng, YS (Peng, Yin-Sheng)
;
Xu, B (Xu, Bo)
;
Ye, XL (Ye, Xiao-Ling)
;
Niu, JB (Niu, Jie-Bin)
;
Jia, R (Jia, Rui)
;
Wang, ZG (Wang, Zhan-Guo)
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浏览/下载:408/97
  |  
提交时间:2010/03/08
Photonic crystal
Lithography-independent and large scale fabrication of a metal electrode nanogap
期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 142-145
作者:
Li Yan
;
Zhang Jiayong
;
Fan Zhongchao
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  |  
浏览/下载:12/0
  |  
提交时间:2010/11/23
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