Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method

	Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method
	Lin Dong ; Liu Zheng ; Xingfang Liu
刊名	materials science forum
	2013
页码	740-742
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2014-05-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24978]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Lin Dong,Liu Zheng,Xingfang Liu. Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method[J]. materials science forum,2013:740-742.
APA	Lin Dong,Liu Zheng,&Xingfang Liu.(2013).Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method.materials science forum,740-742.
MLA	Lin Dong,et al."Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method".materials science forum (2013):740-742.