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科研机构
半导体研究所 [14]
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期刊论文 [11]
会议论文 [3]
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2016 [1]
2011 [1]
2010 [1]
2008 [1]
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半导体材料 [14]
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The shift of the optical absorption band edge of ZnO/ZnS core/shell nanotube arrays beyond quantum effects
期刊论文
journal of materials chemistry c, 2016, 卷号: 4, 期号: 7, 页码: 1369-1374
Samar Tarish
;
Ahmed Al-Haddad
;
Rui Xu
;
Dawei Cao
;
Zhijie Wang
;
Shengchun Qu
;
Ghulam Nabi
;
Yong Lei
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  |  
浏览/下载:21/0
  |  
提交时间:2017/03/10
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
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  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B
;
Zhang Z
;
Zhang R
;
Fu DY
;
Xie ZL
;
Lu H
;
Schaff WJ
;
Song LH
;
Cui YC
;
Hua XM
;
Han P
;
Zheng YD
;
Chen YH
;
Wang ZG
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  |  
浏览/下载:196/52
  |  
提交时间:2010/04/28
BAND-GAP
TEMPERATURE-DEPENDENCE
ENERGY
SEMICONDUCTORS
SPECTRA
EPITAXY
GROWTH
LAYERS
Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane
期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 2, 页码: 453-461
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
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  |  
浏览/下载:49/0
  |  
提交时间:2010/03/08
bulge test
fracture property
microelectromechanical systems (MEMS)
silicon carbide (SiC) thin films
Weibull distribution function
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 281-283
Liu Z (Liu Zhe)
;
Wang XL (Wang Xiaoliang)
;
Wang JX (Wang Junxi)
;
Hu GX (Hu Guoxin)
;
Guo LC (Guo Lunchun)
;
Li JP (Li Jianping)
;
Li JM (Li Jinmin)
;
Zeng YP (Zeng Yiping)
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  |  
浏览/下载:43/0
  |  
提交时间:2010/03/29
characterization
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun)
;
Han XX (Han Xiuxun)
;
Li JM (Li Jiemin)
;
Wei HY (Wei Hongyuan)
;
Cong GW (Cong Guangwei)
;
Liu XL (Liu Xianglin)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
;
Jia QJ (Jia Quanjie)
;
Guo LP (Guo Liping)
;
Hu TD (Hu Tiandou)
;
Wang HH (Wang Huanhua)
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  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
in doping
cracks
Si(111) substrate
LT-AlGaN interlayer
metalorganic chemical vapor deposition
GaN
PHASE EPITAXY
INDIUM-SURFACTANT
OPTICAL-PROPERTIES
SI(111)
STRESS
FILMS
Quantum-dot growth simulation on periodic stress of substrate
期刊论文
journal of chemical physics, 2005, 卷号: 123, 期号: 9, 页码: art.no.094708
作者:
Xu B
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  |  
浏览/下载:149/46
  |  
提交时间:2010/03/17
KINETIC MONTE-CARLO
Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots
期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 25, 期号: 4, 页码: 592-596
作者:
Jin P
;
Xu B
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  |  
浏览/下载:60/0
  |  
提交时间:2010/03/17
stress
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Zhang ZC
;
Ren BY
;
Chen YH
;
Yang SY
;
Wang ZG
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  |  
浏览/下载:27/0
  |  
提交时间:2010/11/15
Czochralski method
growth from melt
semiconductor silicon
argon gas flow
computer simulation
oxygen content
FURNACE PRESSURE
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate
期刊论文
journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
作者:
Zhang JY
;
Jiang DS
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  |  
浏览/下载:81/0
  |  
提交时间:2010/08/12
photoluminescence
metalorganic chemical vapor deposition
epilayer
semiconducting II-VI materials
MOLECULAR-BEAM EPITAXY
GAP
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