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科研机构
半导体研究所 [25]
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期刊论文 [16]
会议论文 [9]
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2010 [1]
2009 [1]
2007 [1]
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2003 [3]
2002 [3]
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半导体材料 [25]
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A study of indium incorporation in In-rich InGaN grown by MOVPE
期刊论文
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:
Wei HY
;
Song HP
收藏
  |  
浏览/下载:139/13
  |  
提交时间:2010/04/22
MOVPE
In-rich InGaN
Indium incorporation
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
CRITICAL THICKNESS
DROPLET FORMATION
PHASE-SEPARATION
TEMPERATURE
FILMS
HETEROSTRUCTURES
IMMISCIBILITY
INXGA1-XN
Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage
期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 3, 页码: 562-566
Liu P
;
He Y
;
Zhou JP
;
Mu CH
;
Zhang HW
收藏
  |  
浏览/下载:156/21
  |  
提交时间:2010/03/08
COPPER-TITANATE
GRAIN-BOUNDARY
BEHAVIOR
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
The diphasic nc-Si/a-Si : H thin film with improved medium-range order
期刊论文
journal of non-crystalline solids, 2004, 卷号: 338, 期号: 0, 页码: 188-191
Zhang S
;
Liao X
;
Xu Y
;
Martins R
;
Fortunato E
;
Kong G
收藏
  |  
浏览/下载:222/53
  |  
提交时间:2010/03/09
AMORPHOUS-SILICON FILMS
The diphasic nc-Si/a-Si : H thin film with improved medium-range order
会议论文
20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003
Zhang S
;
Liao X
;
Xu Y
;
Martins R
;
Fortunato E
;
Kong G
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
AMORPHOUS-SILICON FILMS
SCATTERING
ABSORPTION
DENSITIES
HYDROGEN
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance
期刊论文
applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
作者:
Jin P
收藏
  |  
浏览/下载:458/3
  |  
提交时间:2010/08/12
sulfur passivation
Franz-Keldysh oscillations
undoped-n(+) type GaAs
complex Fourier transformation
FRANZ-KELDYSH OSCILLATIONS
GAAS(001) SURFACES
GAAS(100)
PHOTOEMISSION
SPECTROSCOPY
ENHANCEMENT
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition
期刊论文
journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841
Qu BZ
;
Zhu QS
;
Sun XH
;
Wan SK
;
Wang ZG
;
Nagai H
;
Kawaguchi Y
;
Hiramatsu K
;
Sawaki N
收藏
  |  
浏览/下载:292/4
  |  
提交时间:2010/08/12
P-TYPE GAN
LIGHT-EMITTING-DIODES
LOCALIZED EXCITONS
GALLIUM NITRIDE
FILMS
DEFECTS
LUMINESCENCE
COMPENSATION
SPECTROSCOPY
ACCEPTORS
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Kang JY
;
Shen YW
;
Wang ZG
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
defects
GaN
photoluminescence
electronic structures
YELLOW LUMINESCENCE
EPITAXIAL-FILMS
MG
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 303-307
Kang JY
;
Shen YW
;
Wang ZG
收藏
  |  
浏览/下载:90/4
  |  
提交时间:2010/08/12
defects
GaN
photoluminescence
electronic structures
YELLOW LUMINESCENCE
EPITAXIAL-FILMS
MG
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