Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
	Kang JY ; Shen YW ; Wang ZG
刊名	materials science and engineering b-solid state materials for advanced technology
	2002
卷号	91 期号:0 页码:303-307
关键词	defects GaN photoluminescence electronic structures YELLOW LUMINESCENCE EPITAXIAL-FILMS MG
ISSN号	0921-5107
通讯作者	kang jy,xiamen univ,dept phys,xiamen 361005,peoples r china.
中文摘要	photoluminescence (pl) was investigated in undoped gan from 4.8 k to room temperature. the 4.8 k spectra exhibited recombinations of free exciton, donor-acceptor pair (dap), blue and yellow bands (ybs). the blue band (bb) was also identified to be a dap recombination. the yb was assigned to a recombination from deep levels. the energy-dispersive x-ray spectroscopy show that c and o are the main residual impurities in undoped gan and that c concentration is lower in the epilayers with the stronger bb. the electronic structures of native defects, c and o impurities, and their complexes were calculated using ab initio local-density-functional (ldf) methods with linear muffin-tin-orbital and 72-atomic supercell. the theoretical analyses suggest that the electron transitions from o-n states to c-n and to v-ga states are responsible for dap and the bb, respectively, and the electron transitions between the inner levels of the c-n-o-n complex may be responsible for the yb in our samples. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11944]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kang JY,Shen YW,Wang ZG. Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers[J]. materials science and engineering b-solid state materials for advanced technology,2002,91(0):303-307.
APA	Kang JY,Shen YW,&Wang ZG.(2002).Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers.materials science and engineering b-solid state materials for advanced technology,91(0),303-307.
MLA	Kang JY,et al."Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers".materials science and engineering b-solid state materials for advanced technology 91.0(2002):303-307.