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Electrical transport properties of boron-doped single-walled carbon nanotubes 期刊论文
journal of applied physics, 2013, 卷号: 113, 期号: 5, 页码: 054313
Li, Y. F.; Wang, Y.; Chen, S. M.; Wang, H. F.; Kaneko, T.; Hatakeyama, R.
收藏  |  浏览/下载：14/0  |  提交时间：2013/09/22
Transport properties in AlInSb InAsSb heterostructures 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 24, 页码: 243710 - 243710-7
Zhang, Yuwei; Zhang, Yang; Wang, Chengyan; Zeng, Yiping
收藏  |  浏览/下载：8/0  |  提交时间：2014/03/26
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Chen H (Chen, Hong); Bi Y (Bi, Yang); Deng QW (Deng, Qinwen); Zhang JW (Zhang, Jingwen); Hou X (Hou, Xun)
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/26
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun
收藏  |  浏览/下载：13/0  |  提交时间：2013/04/19
Effect of gas pressure on the properties of silicon thin film 期刊论文
gongneng cailiao/journal of functional materials, 2011, 卷号: 42, 期号: 8, 页码: 1489-1491
Hao, Hui-Ying; Li, Wei-Min; Zeng, Xiang-Bo; Kong, Guang-Lin; Liao, Xian-Bo
收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14
Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:  Zhang Y;  Li YB
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载：38/3  |  提交时间：2011/07/05
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 24, 页码: 241111
Zhang, L; Wei, XC; Liu, NX; Lu, HX; Zeng, JP; Wang, JX; Zeng, YP; Li, JM
收藏  |  浏览/下载：25/0  |  提交时间：2012/02/06
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05

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