Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

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	Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
	Liu XF; Yan GG; Zheng L; Dong L
刊名	chinese physics b
	2011
卷号	20 期号:3 页码:article no.33301
关键词	4H-SiC Raman scattering LOPC modes transport properties SILICON-CARBIDE LIGHT GAP
ISSN号	1674-1056
通讯作者	sun, gs, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. gshsun@red.semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china [60876003]; chinese academy of sciences [y072011000, iscas2008t04]; state grid corporation of china [zl71-09-001]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	the free carrier density and mobility in n-type 4h-sic substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon plasmon coupled (lopc) modes, and compared with those determined by hall-effect measurement and that provided by the vendors. the transport properties of thick and thin 4h-sic epilayers grown in both vertical and horizontal reactors were also studied. the free carrier density ranges between 2 x 10(18) cm(-3) and 8x10(18) cm(-3) with a carrier mobility of 30-55 cm(2)/(v.s) for n-type 4h-sic substrates and 1 x 10(16) -3 x 10(16) cm(-3) with mobility of 290-490 cm(2)/(v.s) for both thick and thin 4h-sic epilayers grown in a horizontal reactor, while thick 4h-sic epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1 x 10(16) cm(-3) with mobility of 380 cm(2)/(v.s). it was shown that raman spectroscopy is a potential technique for determining the transport properties of 4h-sic wafers with the advantage of being able to probe very small volumes and also being non-destructive. this is especially useful for future mass production of 4h-sic epi-wafers.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21249]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Liu XF,Yan GG,Zheng L,et al. Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement[J]. chinese physics b,2011,20(3):article no.33301.
APA	Liu XF,Yan GG,Zheng L,&Dong L.(2011).Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement.chinese physics b,20(3),article no.33301.
MLA	Liu XF,et al."Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement".chinese physics b 20.3(2011):article no.33301.