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| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者: Pan X
  收藏 | 浏览/下载：20/0 | 提交时间：2011/09/14
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| Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.)
收藏 | 浏览/下载：10/0 | 提交时间：2010/11/14
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| Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏 | 浏览/下载：49/0 | 提交时间：2010/04/11
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| Nanocrystalline silicon films with high conductivity and the application for PIN solar cells 期刊论文
vacuum, 2006, 卷号: 81, 期号: 1, 页码: 126-128
Min C (Cui Min); Zhang WJ (Zhang Weija); Wang TM (Wang Tianmin); Jin F (Jin Fei); Li GH (Li Guohua); Ding K (Ding Kun)
收藏 | 浏览/下载：28/0 | 提交时间：2010/04/11
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| Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348
Zheng XH; Wang YT; Feng ZH; Yang H; Chen H; Zhou JM; Liang JW
收藏 | 浏览/下载：39/0 | 提交时间：2010/08/12
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| Hydrogen-dependent lattice dilation in GaN 期刊论文
semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Zhang JP; Wang XL; Sun DZ; Kong MY
收藏 | 浏览/下载：35/0 | 提交时间：2010/08/12
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| Pulsed excimer laser annealing of Mg-doped cubic GaN 期刊论文
journal of crystal growth, 2000, 卷号: 209, 期号: 1, 页码: 203-207
作者: Zhao DG
收藏 | 浏览/下载：46/0 | 提交时间：2010/08/12
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| Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 530-533
Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J
收藏 | 浏览/下载：56/0 | 提交时间：2010/08/12
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| Rapid thermal annealing processing of GaN epilayer on sapphire(0 0 0 1) 期刊论文
journal of crystal growth, 1998, 卷号: 186, 期号: 1-2, 页码: 298-301
Li XB; Sun DZ; Kong MY; Yoon SF
收藏 | 浏览/下载：41/0 | 提交时间：2010/08/12
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| INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING 期刊论文
journal of applied physics, 1991, 卷号: 69, 期号: 11, 页码: 7612-7619
CHEN WD; CUI YD; HSU CC; TAO J
收藏 | 浏览/下载：25/0 | 提交时间：2010/11/15
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