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科研机构
半导体研究所 [63]
内容类型
期刊论文 [54]
会议论文 [9]
发表日期
2011 [3]
2010 [2]
2008 [3]
2007 [1]
2006 [9]
2005 [1]
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学科主题
半导体材料 [63]
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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:
Yin ZG
;
Zhang XW
;
Tan HR
;
Fan YM
;
Zhang SG
收藏
  |  
浏览/下载:42/3
  |  
提交时间:2011/07/05
HIGH-PRESSURE SYNTHESIS
VAPOR-DEPOSITION
NUCLEATION
EMISSION
DIAMOND
GROWTH
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
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  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M
;
Wang, XL
;
Pan, X
;
Xiao, HL
;
Wang, CM
;
Hou, QF
;
Wang, ZG
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  |  
浏览/下载:26/0
  |  
提交时间:2012/01/06
GaN
MOCVD
Si(111)
AlN
VAPOR-PHASE EPITAXY
LAYERS
SUBSTRATE
MOCVD
STRESS
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.)
;
Huang AP (Huang A. P.)
;
Xiao ZS (Xiao Z. S.)
;
Yang ZC (Yang Z. C.)
;
Wang M (Wang M.)
;
Zhang XW (Zhang X. W.)
;
Wang WW (Wang W. W.)
;
Chu PK (Chu Paul K.)
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  |  
浏览/下载:10/0
  |  
提交时间:2010/11/14
OXYGEN
GATE
DIFFUSION
FILMS
Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures
期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 1, 页码: 61-64
Zhao L
;
Diao HW
;
Zeng XB
;
Zhou CL
;
Li HL
;
Wang WJ
收藏
  |  
浏览/下载:213/74
  |  
提交时间:2010/04/04
Silicon thin film
HIT solar cell
Surface passivation
HETEROJUNCTION SOLAR-CELLS
HOT-WIRE CVD
YDROGEN DILUTION
N-TYPE
SPECTROSCOPY
OPTIMIZATION
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ
;
Zhao, LB
;
Zhang, GY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
;
Jia, QJ
;
Guo, LP
;
Hu, TD
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  |  
浏览/下载:66/3
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 3, 页码: 503-506
Yu, LK
;
Xu, B
;
Wang, ZG
;
Jin, P
;
Zhao, C
;
Lei, W
;
Sun, J
;
Hu, LJ
收藏
  |  
浏览/下载:24/1
  |  
提交时间:2010/03/08
growth interruption
in segregation
photoluminescence
molecular beam epitaxy
quantum dots
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG
;
Kong, GL
;
Zeng, XB
;
Hao, HY
;
Liu, FZ
收藏
  |  
浏览/下载:104/29
  |  
提交时间:2010/03/08
silicon
conductivity
chemical vapor deposition
microcrystallinity
absorption
photoconductivity
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Zhang PF (Zhang, P. F.)
;
Liu XL (Liu, X. L.)
;
Wei HY (Wei, H. Y.)
;
Fan HB (Fan, H. B.)
;
Liang ZM (Liang, Z. M.)
;
Jin P (Jin, P.)
;
Yang SY (Yang, S. Y.)
;
Jiao CM (Jiao, C. M.)
;
Zhu QS (Zhu, Q. S.)
;
Wang ZG (Wang, Z. G.)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
characterization
point defects
molecular beam epitaxy
semiconducting gallium compounds
semiconducting indium compounds
semiconducting ternary compounds
1.55 MU-M
QUANTUM-WELLS
TEMPERATURE
GAAS
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