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Effects of growth substrates on the morphologies of TiO2 nanowire arrays and the performance of assembled UV detectors 期刊论文
applied surface science, 2014, 卷号: 315, 页码: 55-58
Liu, GH; Zhang, M; Zhang, DZ; Gu, XH; Meng, FX; Wen, SP; Chen, Y; Ruan, SP
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/20
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Preparation of SnS2 colloidal quantum dots and their application in organic/inorganic hybrid solar cells 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 1-8
Tan, Furui; Qu, Shengchun; Wu, Ju; Liu, Kong; Zhou, Shuyun; Wang, Zhanguo
收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14
VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328
Huang SL; Wu Y; Zhu XF; Li LX; Wang ZG; Wang LZ; Lu GQ
收藏  |  浏览/下载：29/0  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05
Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708
作者:  Zhang XW
收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Li GK
收藏  |  浏览/下载：75/2  |  提交时间：2011/07/05
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M; Zeng YP; Wang JX; Hu Q
收藏  |  浏览/下载：49/2  |  提交时间：2011/07/05

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