CORC

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CORC

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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM
收藏  |  浏览/下载：203/36  |  提交时间：2010/03/29
MOCVD  
In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 927-930
Han, YH; Luo, JF; Hao, AM; Gao, CX; Xie, HS; Qu, SC; Liu, HW; Zou, GT
收藏  |  浏览/下载：36/0  |  提交时间：2010/03/17
Void formation and failure in InGaN/AlGaN double heterostructures 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 404-412
作者:  Han PD
收藏  |  浏览/下载：207/2  |  提交时间：2010/08/12
Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon 期刊论文
semiconductor science and technology, 1999, 卷号: 14, 期号: 1, 页码: 74-76
Wang QY; Ma ZY; Cai TH; Yu YH; Lin LY
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12
A NEW TYPE OF SILICON-ON-INSULATOR WITH A PERFECT SURFACE SILICON LAYER 期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1993, 卷号: 74, 期号: 0, 页码: 204-205
LI JM; CHONG M; ZHU JC
收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15

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