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CORC

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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 34-38
Xie Jing; Liu Yunfei; Yang Jinling; Tang Longjuan; Yang Fuhua
收藏  |  浏览/下载：22/0  |  提交时间：2010/11/23
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling 期刊论文
applied physics letters, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564
Lu, Y; Cong, GW; Liu, XL; Lu, DC; Wang, ZG; Wu, MF
收藏  |  浏览/下载：21/0  |  提交时间：2010/03/17
STRESS  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载：99/8  |  提交时间：2010/08/12
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15
Hydrogen-dependent lattice dilation in GaN 期刊论文
semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Zhang JP; Wang XL; Sun DZ; Kong MY
收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15
STRESS  GROWTH  
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 429-432
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：33/0  |  提交时间：2010/08/12
Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 1997, 卷号: 180, 期号: 1, 页码: 27-33
Yoon SF; Li XB; Kong MY
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/17

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