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科研机构
半导体研究所 [13]
内容类型
期刊论文 [12]
会议论文 [1]
发表日期
2009 [1]
2008 [2]
2007 [1]
2006 [2]
2005 [1]
2003 [1]
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学科主题
半导体材料 [13]
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Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 2, 页码: 278-281
作者:
Song HP
;
Jiao CM
;
Wei HY
收藏
  |  
浏览/下载:199/82
  |  
提交时间:2010/03/08
Nanostructures
Metalorganic chemical vapor deposition
Zinc compounds
Semiconducting II-VI materials
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 3, 页码: 503-506
Yu, LK
;
Xu, B
;
Wang, ZG
;
Jin, P
;
Zhao, C
;
Lei, W
;
Sun, J
;
Hu, LJ
收藏
  |  
浏览/下载:24/1
  |  
提交时间:2010/03/08
growth interruption
in segregation
photoluminescence
molecular beam epitaxy
quantum dots
Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 12, 页码: 3654-3659
Gao HY (Gao Haiyong)
;
Yan FW (Yan Fawang)
;
Li JM (Li Jinmin)
;
Zeng YP (Zeng Yiping)
;
Wang JX (Wang Junxi)
收藏
  |  
浏览/下载:79/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
growth interruption
in segregation
surface oxide
molecular beam epitaxy
quantum dots
MOLECULAR-BEAM EPITAXY
GAAS
PHOTOLUMINESCENCE
LAYER
SHAPE
SIZE
Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 498-508
Zuo R (Zuo Ran)
;
Zhang H (Zhang Hong)
;
Liu XL (Liu Xiang-lin)
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
flow recirculation
numerical modeling
reactor
transport process
MOCVD
thin film growth
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
MOVPE REACTOR
GROWTH
DESIGN
GAN
A model for scattering due to interface roughness in finite quantum wells
期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212
作者:
Han XX
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  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
SINGLE-PARTICLE
ELECTRON-GAS
MOBILITY
GAAS
DISORDER
Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25
Qu BZ
;
Chen Z
;
Lu DC
;
Han P
;
Liu XG
;
Wang XH
;
Wang D
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
nanostructures
metalorganic chemical vapor deposition
nitrides
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
SIZE DISTRIBUTION
GROWTH
GAAS
DEPENDENCE
EMISSION
NUMBER
Statistical investigation on morphology development of gallium nitride in initial growth stage
期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 77-84
Yuan HR
;
Lu DC
;
Liu XL
;
Chen Z
;
Han P
;
Wang XH
;
Wang D
收藏
  |  
浏览/下载:76/3
  |  
提交时间:2010/08/12
atomic force microscopy
crystal morphology
organic vapor phase epitaxy
nitrides
CHEMICAL-VAPOR-DEPOSITION
AIN BUFFER LAYER
GAN
SAPPHIRE
ALN
EPITAXY
MOVPE
Changing the size and shape of Ge island by chemical etching
期刊论文
journal of crystal growth, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
Gao F
;
Huang CJ
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:175/52
  |  
提交时间:2010/08/12
atomic force microscopy
etching
nanostructures
molecular beam epitaxy
semiconducting germanium
semiconducting silicon
QUANTUM DOTS
INAS
GROWTH
STRAIN
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