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CORC

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Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures 期刊论文
journal of applied physics, 2014, 卷号: 115, 期号: 4, 页码: 043702
Jin, DD; Wang, LS; Yang, SY; Zhang, LW; Li, HJ; Zhang, H; Wang, JX; Xiang, RF; Wei, HY; Jiao, CM; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/20
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 082101
Liu, Guipeng; Wu, Ju; Zhao, Guijuan; Liu, Shuman; Mao, Wei; Hao, Yue; Liu, Changbo; Yang, Shaoyan; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：20/0  |  提交时间：2013/05/07
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 82101
Liu, GP; Wu, J; Zhao, GJ; Liu, SM; Mao, W; Hao, Y; Liu, CB; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17
Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells 期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 9, 页码: 2569-2574
Zhang H (Zhang Han); Chen NF (Chen NuoFu); Wang Y (Wang Yu); Zhang XW (Zhang XingWang); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Wang YS (Wang YanSuo); Huang TM (Huang TianMao); Bai YM (Bai YiMing); Fu Z (Fu Zhen)
收藏  |  浏览/下载：250/25  |  提交时间：2010/09/07
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11
Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 971-974
作者:  Li DB
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17
Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures 期刊论文
journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 364-369
Huang XQ; Liu FQ; Che XL; Liu JQ; Lei W; Wang ZG
收藏  |  浏览/下载：214/29  |  提交时间：2010/03/09
Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate 期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959
作者:  Xu B
收藏  |  浏览/下载：73/0  |  提交时间：2010/08/12
Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors 期刊论文
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 147-152
Wu J; Lin F
收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12

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