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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文
journal of alloys and compounds, 2014, 卷号: 605, 页码: 113-117
Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25
Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57
Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：27/0  |  提交时间：2013/10/10
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2014/03/17
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG
收藏  |  浏览/下载：71/5  |  提交时间：2011/07/05
Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas 期刊论文
physical review b, 2011, 卷号: 84, 期号: 7, 页码: 75341
作者:  Jiang CY
收藏  |  浏览/下载：13/0  |  提交时间：2011/09/14
Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.122104
作者:  Yu JL
收藏  |  浏览/下载：44/2  |  提交时间：2011/07/05
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan,
收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2011, 卷号: 43, 期号: 4, 页码: 869-873
作者:  Zhou XL;  Li TF
收藏  |  浏览/下载：31/1  |  提交时间：2011/07/05
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05

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