Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

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	Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer
	Zhou XL; Li TF
刊名	physica e-low-dimensional systems & nanostructures
	2011
卷号	43 期号:4 页码:869-873
关键词	QUANTUM DOTS LIGHT-EMISSION WELLS PHOTOLUMINESCENCE
ISSN号	1386-9477
通讯作者	chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. yhchen@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	973 program [2006cb604908, 2006cb921607]; national natural science foundation of china [60625402, 60990313]; australian research council [dp0774366]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	this paper presents a comparative study on the optical properties of both type-i and type-ii inassb/ingaassb nanostructures on inp substrates. a type-i band alignment is observed for inassb/ingaassb heterostructure when the sb composition in ingaassb layers is 10%, while a type-ii band alignment is observed for the inassb/ingaassb heterostructures when the sb composition in ingaassb layers is higher than 10%. and, besides their long emission wavelength (around 2 gm), the inassb/in0.53ga0.47as0.7sb0.3 nanostructures with type-ii band alignment have a much larger thermal activation energy (163 mev) compared with that of type-i band alignment (79 mev), which is helpful for suppressing the quenching of emission efficiency at high temperatures. crown copyright (c) 2010 published by elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21285]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhou XL,Li TF. Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer[J]. physica e-low-dimensional systems & nanostructures,2011,43(4):869-873.
APA	Zhou XL,&Li TF.(2011).Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer.physica e-low-dimensional systems & nanostructures,43(4),869-873.
MLA	Zhou XL,et al."Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer".physica e-low-dimensional systems & nanostructures 43.4(2011):869-873.