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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文 20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003 Zhang S; Liao X; Xu Y; Martins R; Fortunato E; Kong G 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 AMORPHOUS-SILICON FILMS  SCATTERING  ABSORPTION  DENSITIES  HYDROGEN   Controllable growth of semiconductor nanometer structures 会议论文 conference on low dimensional structures and devices (ldsd), fortaleza, brazil, dec 08-13, 2002 Wang ZG; Wu J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 INAS QUANTUM DOTS  SELF-ORGANIZATION  MONOLAYER COVERAGE  DENSITY  GAAS  ISLANDS  INP(001)  EPITAXY   Space-grown SI-GaAs and its application 会议论文 12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002 Chen NF; Zhong XG; Zhang M; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 SEMIINSULATING GALLIUM-ARSENIDE  FLOATING-ZONE GROWTH  CRYSTAL-GROWTH  ZERO GRAVITY  MICROGRAVITY  SEGREGATION  STOICHIOMETRY  SILICON  DEFECTS  INSB   Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 low dimensional structures  molecular beam epitaxy  nanomaterials  INAS ISLANDS  GAAS  GROWTH  GAAS(100)  THICKNESS  DENSITY   High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 molecular beam epitaxy  high electron mobility transistors  DENSITY   Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文 journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50 Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 microgravity  Chinese recoverable satellite  GaSb  InxGa1-xSb  dissolution  recrystallization  orientation  FLOATING-ZONE GROWTH  INXGA1-XSB CRYSTALS  GASB  MELT  INSB  DIFFUSION  SILICON  CONVECTION  STRIATION   Semi-insulating GaAs grown in outer space 会议论文 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON