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| Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
  收藏 | 浏览/下载：52/10 | 提交时间：2011/07/05
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| Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏 | 浏览/下载：65/25 | 提交时间：2010/03/08
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| Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3740-3744
Li C (Li Chun); Fang GJ (Fang Guojia); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong)
收藏 | 浏览/下载：35/0 | 提交时间：2010/04/11
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| Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文
electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170
作者: Ye XL ; Xu B
收藏 | 浏览/下载：77/0 | 提交时间：2010/04/11
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| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者: Ye XL; Xu B; Jin P
收藏 | 浏览/下载：90/0 | 提交时间：2010/04/11
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| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY
收藏 | 浏览/下载：351/16 | 提交时间：2010/08/12
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| Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者: Xu B
收藏 | 浏览/下载：45/0 | 提交时间：2010/08/12
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| Carbonization process of Si(100) by ion-beam bombardment 期刊论文
journal of crystal growth, 2001, 卷号: 233, 期号: 3, 页码: 446-450
Liao MY; Chai CL; Yao ZY; Yang SY; Liu ZK; Wang ZG
收藏 | 浏览/下载：83/8 | 提交时间：2010/08/12
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| Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition 期刊论文
thin solid films, 2000, 卷号: 360, 期号: 1-2, 页码: 205-212
Zhu M; Guo X; Chen G; Han H; He M; Sun K
收藏 | 浏览/下载：101/0 | 提交时间：2010/08/12
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| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 352-355
Zhuang QD; Li JM; Zeng YP; Yoon SF; Zheng HQ; Kong MY; Lin LY
收藏 | 浏览/下载：61/0 | 提交时间：2010/08/12
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